STAP85050 Datasheet - ST Microelectronics

STAP85050, RF power transistor

PD20010-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs www.datasheet4u.com

Applications

* It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD20010-E boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD20010-E’s superior linearity performance makes it an idea

STAP85050_STMicroelectronics.pdf