SD56150 transistors equivalent, rf power transistors.
* Excellent thermal stability
* Common source configuration Push-pull
* POUT = 150W with 13dB gain @ 860MHz / 32V
* BeO free package
* Internal i.
at frequencies up to te 1.0 GHz. The SD56150 is designed for high le gain and broadband performance operating in o commo.
M252 Epoxy sealed
u The SD56150 is a common source N-channel rod enhancement-mode lateral Field-Effect RF power
transistor designed for broadband commercial
P and industrial applications at frequencies up to te 1.0 GHz. The SD56150 is designed for .
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