SD56120M transistors equivalent, rf power transistors.
* Excellent thermal stability
* Common source configuration Push-pull
* POUT = 120W with 13dB gain @ 860MHz / 32V
* BeO free package
* Internal input .
at frequencies up to 1.0 GHz. The SD56120M is designed for high gain and broadband performance operating in common sourc.
The SD56120M is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The SD56120M is designed for high gain and broadband perfo.
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