SD56060 transistor equivalent, rf power transistor.
* Excellent thermal stability
* Common source configuration Push-pull
* POUT = 60 W with 16 dB gain @ 860 MHz
* BeO-free package
0 (SR[VHDOHG
Figure .
at frequencies up to 1 GHz. It is designed for high gain and broadband performance operating in common source mode at 28.
The device is a common source N-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1 GHz. It is designed for high gain and broadband performance operati.
Image gallery
TAGS
Download (Size : 222.90KB)