SCT1000N170AG datasheet, mosfet equivalent, STMicroelectronics

Features and benefits

Order code VDS RDS(on) max. ID SCT1000N170AG 1700 V 1.3 Ω 7A HiP247 3 2 1
* AEC-Q101 rev. C qualified
* Very fast and robust intrinsic body diode
*.

Application

* Main inverter (electric traction)
* DC/DC converter for EV/HEV
* On board charger (OBC) G(1) S(3) AM0147.

Description

This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The.

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