SCT1000N170AG mosfet equivalent, automotive-grade silicon carbide power mosfet.
Order code
VDS
RDS(on) max.
ID
SCT1000N170AG
1700 V
1.3 Ω
7A
HiP247
3 2 1
* AEC-Q101 rev. C qualified
* Very fast and robust intrinsic body diode
*.
* Main inverter (electric traction)
* DC/DC converter for EV/HEV
* On board charger (OBC)
G(1) S(3)
AM0147.
This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The.
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