Datasheet4U.com

SCT10N120AG - Automotive-grade silicon carbide Power MOSFET

STMicroelectronics

📥 Download Datasheet

SCT10N120AG Datasheet Preview — Preview of SCT10N120AG PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	SCT10N120AG
Manufacturer	STMicroelectronics ↗
File Size	234.21 KB
Description	Automotive-grade silicon carbide Power MOSFET
Datasheet	SCT10N120AG-STMicroelectronics.pdf

SCT10N120AG Product details

Description

This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials.

Features

HiP247 3 2 1 D(2, TAB).
AEC-Q101 qualified.
Very tight variation of on-resistance vs. temperature.
Very high operating temperature capability (TJ = 200 °C).
Very fast and robust intrinsic body diode.
Low capacitance.

📁 SCT10N120AG Similar Datasheet

SCT12A0 - 30W Fully Integrated Synchronous Boost Converter (SCT)
SCT12A3 - Fully Integrated Synchronous Boost Converter (SCT)
SCT12N60FD - 12A Standard Triac (KODENSHI)
SCT12N60P - 12A Standard Triac (KODENSHI)
SCT1527 - OTP Encoder (SilvanChip)
SCT1555 - PRECISION SINGLE CELL TIMER (Zetex Semiconductors)
SCT16N60FD - 16A Standard Triac (KODENSHI)
SCT16N60P - 16A Standard Triac (KODENSHI)

Other Datasheets by STMicroelectronics

SCT10N120 - 1200V 12A Silicon carbide Power MOSFET
SCT1000N170 - Silicon carbide Power MOSFET
SCT1000N170AG - Automotive-grade silicon carbide Power MOSFET
SCT011H75G3AG - Automotive-grade silicon carbide Power MOSFET
SCT012H90G3AG - Automotive-grade silicon carbide Power MOSFET
SCT012W90G3AG - Automotive-grade silicon carbide Power MOSFET

Published: Mar 1, 2023 |