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SCT10N120AG - Automotive-grade silicon carbide Power MOSFET

Description

This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials.

This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature.

Features

  • HiP247 3 2 1 D(2, TAB).
  • AEC-Q101 qualified.
  • Very tight variation of on-resistance vs. temperature.
  • Very high operating temperature capability (TJ = 200 °C).
  • Very fast and robust intrinsic body diode.
  • Low capacitance.

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SCT10N120AG Automotive-grade silicon carbide Power MOSFET 1200 V, 12 A, 520 mΩ (typ., TJ = 150 °C) in an HiP247 package Features HiP247 3 2 1 D(2, TAB) • AEC-Q101 qualified • Very tight variation of on-resistance vs. temperature • Very high operating temperature capability (TJ = 200 °C) • Very fast and robust intrinsic body diode • Low capacitance Applications • Motor drives • EV chargers • High voltage DC-DC converters • Switch mode power supplies G(1) S(3) AM01475v1_noZen Description This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature.
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