Order code VDS RDS(on) max. ID SCT1000N170 1700 V 1.3 Ω 7A
* High speed switching performance
* Very fast and robust intrinsic body diode
* Low capac.

* Auxiliary power supply for server
* Switch mode power supply Description This silicon carbide Power MOSFET is.

This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The.

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