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SCT1000N170 Datasheet, STMicroelectronics

SCT1000N170 mosfet equivalent, silicon carbide power mosfet.

SCT1000N170 Avg. rating / M : 1.0 rating-11

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SCT1000N170 Datasheet

Features and benefits

Order code VDS RDS(on) max. ID SCT1000N170 1700 V 1.3 Ω 7A
* High speed switching performance
* Very fast and robust intrinsic body diode
* Low capac.

Application


* Auxiliary power supply for server
* Switch mode power supply Description This silicon carbide Power MOSFET is.

Description

This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The.

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TAGS

SCT1000N170
Silicon
carbide
Power
MOSFET
SCT1000N170AG
SCT10N120
SCT10N120AG
STMicroelectronics

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