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SCT070HU120G3AG Datasheet, STMicroelectronics

SCT070HU120G3AG mosfet equivalent, automotive-grade silicon carbide power mosfet.

SCT070HU120G3AG Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 635.13KB)

SCT070HU120G3AG Datasheet

Features and benefits

Order code SCT070HU120G3AG VDS 1200 V RDS(on) typ. 63 mΩ ID 30 A
* AEC-Q101 qualified
* Very low RDS(on) over the entire temperature range
* High speed sw.

Application


* Main inverter (electric traction)
* DC/DC converter for EV/HEV
* On board charger (OBC) Description This s.

Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high.

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TAGS

SCT070HU120G3AG
Automotive-grade
silicon
carbide
Power
MOSFET
STMicroelectronics

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