SCT012H90G3AG - Automotive-grade silicon carbide Power MOSFET

STMicroelectronics

Datasheet Details

Part number	SCT012H90G3AG
Manufacturer	STMicroelectronics ↗
File Size	385.75 KB
Description	Automotive-grade silicon carbide Power MOSFET
Datasheet	SCT012H90G3AG-STMicroelectronics.pdf

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology.

Order code SCT012H90G3AG VDS 900 V RDS(on) typ. 12 mΩ.
AEC-Q101 qualified.
Very low RDS(on) over the entire temperature range.
High speed switching performances.
Very fast and robust intrinsic body diode.
Source sensing pin for increased efficiency ID 110 A Gate (1) Driver source (2) Power source (3, 4, 5, 6, 7) N-chG1DS2PS34567DTAB.

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Published: Mar 1, 2023 |