SCT012W90G3AG datasheet, mosfet equivalent, STMicroelectronics

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Features and benefits

Order code SCT012W90G3AG VDS 900 V RDS(on) typ. 12 mΩ ID 110 A HiP247 3 2 1 D(2, TAB)
* AEC-Q101 qualified
* Very low RDS(on) over the entire temperature r.

Application

* Main inverter (electric traction)
* DC/DC converter for EV/HEV
* On board charger (OBC) AM01475v1_noZen .

Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high.

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