SCT014HU65G3AG Datasheet, STMicroelectronics

TAB 7 Order code SCT014HU65G3AG VDS 650 V RDS(on) typ. 13.5 mΩ ID 110 A Gate (1) Driver source (2) 1 HU3PAK Drain (TAB) Power source (3, 4, 5, 6, 7) N-chG1DS2PS345.

* Main inverter (electric traction)
* DC/DC converter for EV/HEV
* On board charger (OBC) Description Thi.

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very hig.