RF4L10700CB4 transistor equivalent, rf power ldmos transistor.
Order code
Frequency
VDD
POUT
Gain Efficiency
RF4L10700CB4
915 MHz
40 V
700 W
15 dB
70%
* High efficiency and linear gain operations
* Integrated ESD .
* Excellent thermal stability, low HCI drift
* In compliance with the European directive 2002/95/EC
Application.
The RF4L10700CB4 is a 700 W, 40 V, high performance, internally matched LDMOS FET, designed for multiple ISM and RF energy applications up to 1 GHz frequency range. It can be used in class AB, B or C for both CW and pulse applications in narrow-band .
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