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RF4L10700CB4 Datasheet, STMicroelectronics

RF4L10700CB4 transistor equivalent, rf power ldmos transistor.

RF4L10700CB4 Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 521.01KB)

RF4L10700CB4 Datasheet
RF4L10700CB4
Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 521.01KB)

RF4L10700CB4 Datasheet

Features and benefits

Order code Frequency VDD POUT Gain Efficiency RF4L10700CB4 915 MHz 40 V 700 W 15 dB 70%
* High efficiency and linear gain operations
* Integrated ESD .

Application


* Excellent thermal stability, low HCI drift
* In compliance with the European directive 2002/95/EC Application.

Description

The RF4L10700CB4 is a 700 W, 40 V, high performance, internally matched LDMOS FET, designed for multiple ISM and RF energy applications up to 1 GHz frequency range. It can be used in class AB, B or C for both CW and pulse applications in narrow-band .

Image gallery

RF4L10700CB4 Page 1 RF4L10700CB4 Page 2 RF4L10700CB4 Page 3

TAGS

RF4L10700CB4
power
LDMOS
transistor
STMicroelectronics

Manufacturer


STMicroelectronics (https://www.st.com/)

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