logo

RF3L05200CB4 Datasheet, STMicroelectronics

RF3L05200CB4 transistor equivalent, rf power ldmos transistor.

RF3L05200CB4 Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 1.66MB)

RF3L05200CB4 Datasheet
RF3L05200CB4
Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 1.66MB)

RF3L05200CB4 Datasheet

Features and benefits

Order code RF3L05200CB4 Frequency 650 MHz VDD 28 V POUT 200 W Gain 19 dB Efficiency 63%
* High efficiency and linear gain operations
* Integrated ESD prote.

Application


* 2-30 MHz HF or short wave communication
* 30-88 MHz ground communication
* 118-140 MHz Avionics
* 136-.

Description

The RF3L05200CB4 is a 200 W, 28/32 V, LDMOS FET designed for wideband communication and ISM applications in the frequency range from HF to 1 GHz. It can be used in class AB, B or C for all typical modulation formats. Product status link RF3L05200CB4.

Image gallery

RF3L05200CB4 Page 1 RF3L05200CB4 Page 2 RF3L05200CB4 Page 3

TAGS

RF3L05200CB4
power
LDMOS
transistor
STMicroelectronics

Manufacturer


STMicroelectronics (https://www.st.com/)

Related datasheet

RF3L05250CB4

RF3L05150CB4

RF3L05400CB4

RF300

RF3000

RF3002A

RF300C

RF300D

RF300DD

RF301

RF301B2S

RF301BM2S

RF301BM2SFH

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts