RF3L05150CB4 Key Features
- High efficiency and linear gain operations
- Integrated ESD protection
- Large positive and negative gate-source voltage range for improved class C
- In pliance with the european directive 2002/95/EC
| Part Number | Description |
|---|---|
| RF3L05200CB4 | RF power LDMOS transistor |
| RF3L05250CB4 | RF power LDMOS transistor |
| RF3L05400CB4 | RF Power LDMOS transistor |