MASTERGAN3 driver equivalent, high power density 600v half bridge driver.
* 600 V system-in-package integrating half-bridge gate driver and high-voltage power GaN transistors in asymmetrical configuration:
– QFN 9 x 9 x 1 mm.
The MASTERGAN3 is an advanced power system-in-package integrating a gate driver and two enhancement mode GaN transistors in asymmetrical half‑bridge configuration.
The integrated power GaNs have 650 V drain‑source blocking voltage and RDS(ON) of 225 .
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