MASTERGAN1 driver equivalent, high power density 600v half bridge driver.
* 600 V system-in-package integrating half-bridge gate driver and high-voltage power GaN transistors:
– QFN 9 x 9 x 1 mm package
– RDS.
The MASTERGAN1 is an advanced power system-in-package integrating a gate driver and two enhancement mode GaN transistors in half‑bridge configuration. The integrated power GaNs have RDS(ON) of 150 mΩ and 650 V drain‑source breakdown voltage, while th.
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