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M28F102 - 1 Mbit Flash Memory

General Description

The M28F102 Flash memory is a non-volatile memory that may be erased electrically at the chip level and programmed by word.

It is organised as 64 Kwords of 16 bits.

It uses a command register architectureto select the operatingmodes and thus provides a simple microprocessor interface.

Key Features

  • llowed by an Erase Verify.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet.co.kr M28F102 1 Mbit (64Kb x16, Bulk) Flash Memory 5V ± 10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 90ns BYTE PROGRAMMING TIME: 10µs typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION – Stand-by Current: 5µA typical 10,000 ERASE/PROGRAM CYCLES OTP COMPATIBLE PACKAGES and PINOUT INTEGRATED ERASE/PROGRAM-STOP TIMER 20 YEARS DATA RETENTION – Defectivity below 1ppm/year ELECTRONIC SIGNATURE – Manufacturer Code: 0020h – Device Code: 0050h PLCC44 (K) TSOP40 (N) 10 x 14mm Figure 1. Logic Diagram DESCRIPTION The M28F102 Flash memory is a non-volatile memory that may be erased electrically at the chip level and programmed by word. It is organised as 64 Kwords of 16 bits.