LET9045C transistor equivalent, rf power transistor.
* Excellent thermal stability
* Common source configuration
* POUT (@28 V) = 45 W with 18.5 dB gain @ 960 MHz
* POUT (@36V) = 70 W with 18.5 dB gain @ 960.
at frequencies up to 1.0 GHz. The LET9045C is designed for high gain and broadband performance operating in common sourc.
The LET9045C is a common source N-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The LET9045C is designed for high gain and broadband perfo.
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