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LET9006 Datasheet STMicroelectronics

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ate-Source Voltage Drain Current Power Dissipation (@ Tc = 70°C) Max. Operating Junction Temperature Storage Temperature Parameter Value 65 -0.5 to +15 1 16 150 -65 to +150 Unit V V A W °C °C THERMAL DATA Rth(j-c) Junction -Case Thermal Resistance 5 °C/W April, 15 2003 1/4 LET9006 ELECTRICAL SPE.

LET9006 LET9006 LET9006
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POWER
TRANSISTORS
Ldmos
Enhanced
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LET9002
LET9006
LET9045
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