GB19NC60K datasheet, igbt equivalent, STMicroelectronics

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Features and benefits

* Low on-voltage drop (VCE(sat))
* Low Cres / Cies ratio (no cross conduction susceptibility)
* Short circuit withstand time 10 µs
* IGBT co-packaged w.

Application

t(s
* High frequency inverters uc
* Motor drivers rodDescription te PThis IGBT utilizes the advanced PowerMESH™ pr.

Description

te PThis IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off lebetween switching performance and low on-state sobehavior. 1 TO-220 D2PAK Figure 1. Internal schematic diagram lete Product(s) - ObTable 1. Device summar.

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