GB10HF60KD igbt equivalent, short-circuit rugged igbt.
* Low on-voltage drop (VCE(sat))
* Operating junction temperature up to 175 °C
* Low Cres / Cies ratio (no cross conduction
)susceptibility) t(s
* Tight.
lete
* Motor drives o
* High frequency inverters bs
* SMPS and PFC in both hard switch and Oresonant topologies.
cThis device utilizes the advanced PowerMESH™ uprocess for the IGBT and the Turbo 2 Ultrafast dhigh voltage technology for the diode. The rocombination results in a very good trade-off Pbetween conduction losses and switching tebehavior rendering the.
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