GB10NB37LZ Datasheet | STMicroelectronics

FEATURE SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX ”T4”) 3 1 DESCRIPTION Using the latest high voltage technology based on patented strip layout, SGS-Thomson has designed an advanced family of IGBTs with outstanding performances. The built in collector-gate zener exhibits a very precise active clamping while the gate-emitter zener supplies an ESD protection. APPLICATIONS AUTOMOTIVE IGNITION D2PAK TO-263 INTERNAL SCHEMATIC DIAGRAM s ABSOLUTE MAXIMUM RATINGS Symb ol V CES V ECR V GE IC IC I CM ( - ) P tot E SD T s tg Tj June 1999 Parameter Collector-Emitter Voltage (VGS = 0) Reverse Battery Protection G ate-Emitter Voltage Collector Current (continuous) at Tc = 25 C Collector Current (continuous) at Tc = 100 C Collector Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor ESD (Human Body Model) Storage T emperature Max. Operating Junction Temperature o o o Value CLAMPED 18 CLAMPED 20 20 60 125 0.83 4 -65 to 175 175 Un it V V V A A A W W /o C KV o o C C 1/8 (- ) Pulse width limited by safe operating area Free Datasheet http://.0PDF. STGB10NB37LZ THERMAL DATA R thj -case R thj -amb R thc-sink Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Max Max T yp 1.2 62.5 0.2 o o C/W C/W o C/W ELECTRICAL CHARACTERISTICS (Tj = 25 o C unless otherwise specified) OFF Symbo l BV (CES) BV (ECR) BV GE I CES IGES R GE Parameter Clamped Voltage Emitter Collector Break-down Voltage Gate Emitter Break-down Voltage Collector cut-off Current (VGE = 0) Gate-Emitter Leakage Current (VCE = 0) Gate Emitter Resistance Test Con ditions I C = 2 m A T j = - 40 to 150 o C I C = 75 m A T j = - 40 to 150 o C I C = ± 2 m A Τ j = - 40 to 150 o C V CE = 15 V V CE = 200 V V GE = ± 10 V V GE = 0 V GE = 0 Tj = 150 o C o T j = 150 C V CE = 0 20 V GE = 0 V GE = 0 Min. 375 18 12 16 10 100 ± 0.7 Typ. 400 Max. 425 Unit V V V µA µA m A KΩ ON (∗) Symbo l V GE(th) V CE(SAT ) IC Parameter Gate...