GB10B60KD transistor equivalent, insulated gate bipolar transistor.
* Low VCE (on) Non Punch Through IGBT Technology.
* Low Diode VF.
* 10µs Short Circuit Capability.
* Square RBSOA.
* Ultrasoft Diode Reverse Recovery .
ec)
Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
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