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GB10B60KD Datasheet, International Rectifier

GB10B60KD transistor equivalent, insulated gate bipolar transistor.

GB10B60KD Avg. rating / M : 1.0 rating-15

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GB10B60KD Datasheet

Features and benefits


* Low VCE (on) Non Punch Through IGBT Technology.
* Low Diode VF.
* 10µs Short Circuit Capability.
* Square RBSOA.
* Ultrasoft Diode Reverse Recovery .

Application

ec) Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) www.irf.com 9 www.DataSheet4U.com IRG/B/S.

Image gallery

GB10B60KD Page 1 GB10B60KD Page 2 GB10B60KD Page 3

TAGS

GB10B60KD
INSULATED
GATE
BIPOLAR
TRANSISTOR
International Rectifier

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