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BV32 - High voltage fast-switching NPN power transistor

General Description

The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability.

It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.

Key Features

  • High voltage capability.
  • Low spread of dynamic parameters.
  • Minimum lot-to-lot spread for reliable operation.
  • Very high switching speed.

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Other Datasheets by STMicroelectronics

Part Number Description
BV32G High voltage fast-switching NPN power transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STBV32 High voltage fast-switching NPN power transistor Features ■ High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Compact fluorescent lamps (CFLS) ■ SMPS for battery charger Description The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The STBV32G and STBV32G-AP are supplied using halogen-free molding compound. TO-92 TO-92AP Figure 1. Internal schematic diagram Table 1.