Click to expand full text
BV32
NPN Silicon Epitaxial Planar Transistor
High voltage fast switching power transistor
1.Base 2.Emitter 3.Collector
TO-92 Plastic Package Weight approx. 0.19g
Absolute Maximum Ratings (Ta = 25 C)
O
Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Collector Peak Current (tp < 5 ms) Base Current Base Peak Current Total Dissipation Operating Junction Temperature Storage Temperature Range
Symbol VCBO VCEO VEBO IC ICM IB IBM Ptot Tj Tstg
Value 700 400 9 1.5 3 0.75 1.5 1.1 150 - 65 to + 150
Unit V V V A A A A W
O
C C
O
Characteristics at Ta = 25 C
O
Parameter DC Current Gain at VCE = 2 V, IC = 0.
BV32 Datasheet
