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STBV32
High voltage fast-switching NPN power transistor
Features
■ High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed
Applications
■ Compact fluorescent lamps (CFLS) ■ SMPS for battery charger
Description
The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The STBV32G and STBV32G-AP are supplied using halogen-free molding compound.
TO-92
TO-92AP
Figure 1. Internal schematic diagram
Table 1.
BV32G Datasheet
