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BULT116D - MEDIUM VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

General Description

The device is manufactured using Multi Epitaxial Planar technology for high switching speeds and medium voltage capability.

It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com ® BULT116D MEDIUM VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR PRELIMINARY DATA s s s s INTEGRATED ANTIPARALLEL COLLECTOR- EMITTER DIODE LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED APPLICATIONS: COMPACT FLUORESCENT LAMPS UP TO 23 W AT 110 V A.C. MAINS s FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS AT 110 V A.C. MAINS s 3 2 1 SOT-32 DESCRIPTION The device is manufactured using Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.