900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




STMicroelectronics Electronic Components Datasheet

BTW67 Datasheet

1000V SCR thyristor

No Preview Available !

BTW67
Datasheet
50 A,1000 V SCR thyristor in RD91
A
G
K
RD91
Product status link
BTW67
Product summary
IT(RMS)
50 A
VDRM/VRRM
1000 V
IGT 80 mA
Features
• High current SCR
• High commutation capability
• Low thermal resistance with clip bonding
• Insulated package RD91 high power:
– Low thermal resistance with clip bonding
– Insulated voltage: 2500 VRMS
– Complies with UL 1557 (File ref : E81734)
• RoHS (2002/95/EC) compliant
Applications
• Solid state relays
• Welding equipment
• High power motor control
Description
Available in 2500 V insulated high power package, the 50 A and 1000 V SCR BTW67
is suitable in applications where power handling and power dissipation are critical,
such as solid state relays, welding equipment and high power motor control.
Based on a clip assembly technology, they offer a superior performance in surge
current handling capabilities.
DS0642 - Rev 6 - June 2019
For further information contact your local STMicroelectronics sales office.
www.st.com


STMicroelectronics Electronic Components Datasheet

BTW67 Datasheet

1000V SCR thyristor

No Preview Available !

BTW67
Characteristics
1 Characteristics
Table 1. Absolute maximum ratings
Symbol
Parameters
IT(RMS) RMS on-state current (full sine wave)
IT(AV)
Average on-state current
(180° conduction angle)
ITSM Non repetitive surge peak on-state current (full cycle, Tj initial = 25 °C)
I2t I2t value for fusing
tp = 10 ms
Critical rate of rise of on-state current
dl/dt
IG = 2 x IGT , tr ≤ 100 ns
F = 60 Hz
IGM Peak gate current
tp = 20 µs
PG(AV) Average gate power dissipation
Tstg Storage junction temperature range
Tj Operating junction temperature range
VGRM Maximum peak reverse gate voltage
Vins Insulation RMS voltage, 1 minute
Tc = 70 °C
Value
50
Unit
A
Tc = 70 °C
32
A
tp =8.3 ms
610
1680
A
A2s
Tj = 125 °C 50 A/µs
Tj = 125 °C
Tj = 125 °C
8
1
-40 to +150
-40 to +125
5
2500
A
W
°C
°C
V
V
Symbol
IGT
VGT
VGD
IH
IL
dV/dt
VTM
VTO
RD
IDRM/IRRM
Table 2. Electrical characteristics (Tj = 25°C, unless otherwise specified)
Test conditions
VD = 12 V, RL = 33 Ω
Tj
25 °C
Value
Min. 8
Max 80
Max 1.3
VD = VDRM, RL = 3.3 kΩ
IT = 500 mA, gate open
IG = 1.2 x IGT
VD = 67 %, VDRM gate open
ITM = 100 A, tp = 380 μs
threshold on-state voltage
125 °C
125 °C
25 °C
125 °C
Min.
Max.
Max.
Min.
Max.
Max.
0.2
150
200
1000
1.9
1.0
Dynamic resistance
125 °C
Max.
8.5
VD = VDRM, VR = VRRM
25 °C
125 °C
Max.
10
5
Unit
mA
V
V
mA
mA
V/µs
V
V
µA
mA
Symbol
Rth(j-c)
Table 3. Thermal resistance
Parameters
Junction to case (D.C)
Value
1.0
Unit
°C/W
DS0642 - Rev 6
page 2/10


Part Number BTW67
Description 1000V SCR thyristor
Maker ST Microelectronics
Total Page 10 Pages
PDF Download

BTW67 Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 BTW63 Fast Turn-Off Thyristors
NXP
2 BTW63 Thyristor SCR 600V 610A 3-Pin RD-91 Bulk
New Jersey Semiconductor
3 BTW63-1000R Fast Turn-Off Thyristors
NXP
4 BTW63-600R Fast Turn-Off Thyristors
NXP
5 BTW63-800R Fast Turn-Off Thyristors
NXP
6 BTW67 1000V SCR thyristor
ST Microelectronics
7 BTW67-1000 1000V SCR thyristor
STMicroelectronics
8 BTW68 (BTW67 - BTW69) 50A SCRs
ST Microelectronics
9 BTW68 30A SCRs
ST Microelectronics





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy