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STMicroelectronics Electronic Components Datasheet

BTW68 Datasheet

(BTW67 - BTW69) 50A SCRs

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® BTW67 and BTW69 Series
STANDARD
50A SCRS
Table 1: Main Features
Symbol
Value
IT(RMS)
50
VDRM/VRRM
600 to 1200
IGT 80
Unit
A
V
mA
DESCRIPTION
Available in high power packages, the BTW67 /
BTW69 Series is suitable in applications where
power handling and power dissipation are critical,
such as solid state relays, welding equipment,
high power motor control.
Based on a clip assembly technology, they offer a
superior performance in surge current handling
capabilities.
Thanks to their internal ceramic pad, they provide
high voltage insulation (2500VRMS), complying
with UL standards (file ref: E81734).
A
G
K
K
G
A
RD91
(BTW67)
K
A
G
TOP3 Ins.
(BTW69)
Table 2: Order Codes
Part Numbers
BTW67-xxx
BTW69-xxxRG
Marking
BTW67xxx
BTW69xxx
Table 3: Absolute Ratings (limiting values)
Symbol
IT(RMS)
RMS on-state current
(180° conduction angle)
Parameter
RD91
TOP3 Ins.
IT(AV)
ITSM
I²t
dI/dt
IGM
PG(AV)
Tstg
Tj
VRGM
Average on-state current
(180° conduction angle)
RD91
TOP3 Ins.
tp = 8.3 ms
Non repetitive surge peak on-state current
tp = 10 ms
I²t Value for fusing
Critical rate of rise of on-state current IG = 2
x IGT , tr 100 ns
F = 60 Hz
Peak gate current
tp = 20 µs
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
Maximum peak reverse gate voltage
Tc = 70°C
Tc = 75°C
Tc = 70°C
Tc = 75°C
Tj = 25°C
Tj = 25°C
Value
50
32
610
580
1680
Tj = 125°C
50
Tj = 125°C
Tj = 125°C
8
1
- 40 to + 150
- 40 to + 125
5
Unit
A
A
A
A2S
A/µs
A
W
°C
V
February 2006
REV. 5
1/6


STMicroelectronics Electronic Components Datasheet

BTW68 Datasheet

(BTW67 - BTW69) 50A SCRs

No Preview Available !

BTW67 and BTW69 Series
Tables 4: Electrical Characteristics (Tj = 25°C, unless otherwise specified)
Symbol
Test Conditions
IGT
VD = 12 V
VGT
RL = 33
MIN.
MAX.
MAX.
VGD VD = VDRM RL = 3.3 k
Tj = 125°C MIN.
IH IT = 500 mA Gate open
MAX.
IL IG = 1.2 x IGT
MAX.
dV/dt VD = 67 % VDRM Gate open
Tj = 125°C MIN.
VTM ITM = 100 A tp = 380 µs
Tj = 25°C
MAX.
Vt0 Threshold voltage
Tj = 125°C MAX.
Rd Dynamic resistance
Tj = 125°C MAX.
IDRM
IRRM
VDRM = VRRM
Tj = 25°C
Tj = 125°C
MAX.
Value
8
80
1.3
0.2
150
200
1000
1.9
1.0
8.5
10
5
Unit
mA
V
V
mA
mA
V/µs
V
V
m
µA
mA
Table 5: Thermal resistance
Symbol
Parameter
Rth(j-c) Junction to case (D.C.)
Rth(j-a) Junction to ambient (D.C.)
RD91 (Insulated)
TOP3 Insulated
TOP3 Insulated
Value
1.0
0.9
50
Unit
°C/W
°C/W
Figure 1: Maximum average power dissipation
versus average on-state current
Figure 2: Average and D.C. on-state current
versus case temperature
P(W)
55
50 α = 180°
45
40
35
30
25
20
15
10
5
0
05
IT(AV)(A)
10 15 20
360°
α
25 30
35
IT(AV)(A)
60
D.C.
50
40
α = 180°
30
20
10
0
0 25
BTW67
BTW69
BTW69
BTW67
Tcase(°C)
50 75
100
125
2/6


Part Number BTW68
Description (BTW67 - BTW69) 50A SCRs
Maker ST Microelectronics
Total Page 6 Pages
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