Type STW55NM60ND VDSS (@TJmax) 650 V RDS(on) max < 0.060 Ω ID 51 A
* The worldwide best RDS(on) amongst the fast recovery diode devices in TO-247
* 100% aval.

Description This FDmesh™ II Power MOSFET with intrinsic fast-recovery body diode is produced using the second generati.

This FDmesh™ II Power MOSFET with intrinsic fast-recovery body diode is produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, this revolutionary device features extremely low onresistance and su.

55N03L

55N03LT

55N03LTA

55N06L

55N10

55N12B

55N17B

55N20E

55N50F

55N9BD

55NF03L

55NF06

55NS

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