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55N03LT - PHB55N03LT

General Description

N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology.

High frequency computer motherboard d.c.

to d.c.

High current switching The PHP55N03LT is supplied in the SOT78 (TO220AB) conventional lea

Key Features

  • ’Trench’ technology.
  • Very low on-state resistance.
  • Fast switching.
  • Low thermal resistance.
  • Logic level compatible PHP55N03LT, PHB55N03LT PHD55N03LT QUICK.

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www.DataSheet4U.com Philips Semiconductors Product specification N-channel TrenchMOS™ transistor Logic level FET FEATURES • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance • Logic level compatible PHP55N03LT, PHB55N03LT PHD55N03LT QUICK REFERENCE DATA d SYMBOL VDSS = 25 V ID = 55 A RDS(ON) ≤ 14 mΩ (VGS = 10 V) RDS(ON) ≤ 18 mΩ (VGS = 5 V) g s GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. Applications:• High frequency computer motherboard d.c. to d.c. converters • High current switching The PHP55N03LT is supplied in the SOT78 (TO220AB) conventional leaded package. The PHB55N03LT is supplied in the SOT404 (D2PAK) surface mounting package.