55N10
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.
Features
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- 61A, 100V, RDS(on) = 0.026Ω @VGS = 10 V Low gate charge ( typical 75 n C) Low Crss ( typical 130 p F) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating
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TO-3P
FQA Series http://..net/
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Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL
TC = 25°C unless otherwise noted
Parameter Drain-Source Voltage
- Continuous (TC = 25°C) Drain Current
- Continuous (TC =...
