Datasheet4U Logo Datasheet4U.com

2STBN15D100 - NPN Transistor

General Description

The device is manufactured in planar technology with “base island” layout and monolithic Darlington configuration.

Figure 1.

Table 1.

Key Features

  • Good hFE linearity.
  • High fT frequency.
  • Monolithic Darlington configuration with integrated antiparallel collector-emitter diode.

📥 Download Datasheet

Other Datasheets by STMicroelectronics

Part Number Description
2ST1480 (2ST1480 / 2ST2480) Complementary power transistors
2ST2480 (2ST1480 / 2ST2480) Complementary power transistors
2STA1695 High power PNP epitaxial planar bipolar transistor
2STA1962 High power PNP epitaxial planar bipolar transistor
2STD1665 Low voltage fast-switching NPN power transistor
2STF1360 Low voltage fast-switching NPN power transistors
2STF1525 Transistors
2STF2220 High Gain Low Voltage PNP Power Transistor
2STL1360 LOW VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
2STL1525 Low voltage high performance NPN power transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2STBN15D100 Low voltage NPN power Darlington transistor Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Application ■ Linear and switching industrial equipment Description The device is manufactured in planar technology with “base island” layout and monolithic Darlington configuration. TAB 3 1 D²PAK Figure 1. Internal schematic diagrams R1 = 8 kΩ R2 = 150 Ω Table 1. Device summary Order code 2STBN15D100T4 Marking BN15D100 Package D²PAK January 2010 Doc ID 16117 Rev 2 Packaging Tape and reel 1/7 www.st.com 7 Electrical ratings 1 Electrical ratings Table 2.