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2STL1525 - Low voltage high performance NPN power transistor

General Description

The device is a NPN transistor manufactured using new “PB-HCD” (power bipolar high current density) technology.

The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.

Table 1.

Key Features

  • Very low collector-emitter saturation voltage High current gain characteristic Fast switching speed.

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www.DataSheet4U.com 2STL1525 Low voltage high performance NPN power transistor Preliminary data Features ■ ■ ■ Very low collector-emitter saturation voltage High current gain characteristic Fast switching speed Applications ■ ■ ■ ■ ■ ■ Emergency lighting LED Motherboard and hard disk drive Mobile equipment Battery charger Voltage regulation Figure 1. TO-92L Internal schematic diagram Description The device is a NPN transistor manufactured using new “PB-HCD” (power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage. Table 1.