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2STA1695 - High power PNP epitaxial planar bipolar transistor

Description

The device is a PNP transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology.

The resulting transistor shows good gain linearity behaviour.

Recommended for 70W to 100W high fidelity audio frequency amplifier output stage.

Features

  • Preliminary data High breakdown voltage VCEO = -140V Complementary to 2STC4468 Typical ft =20MHz Fully characterized at 125 oC 3 2 1.

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Datasheet Details

Part number 2STA1695
Manufacturer STMicroelectronics
File Size 233.06 KB
Description High power PNP epitaxial planar bipolar transistor
Datasheet download datasheet 2STA1695 Datasheet
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www.DataSheet4U.com 2STA1695 High power PNP epitaxial planar bipolar transistor General features ■ ■ ■ ■ Preliminary data High breakdown voltage VCEO = -140V Complementary to 2STC4468 Typical ft =20MHz Fully characterized at 125 oC 3 2 1 Applications ■ Audio power amplifier TO-3P Description The device is a PNP transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Recommended for 70W to 100W high fidelity audio frequency amplifier output stage. Internal schematic diagram Order codes Part Number 2STA1695 Marking 2STA1695 Package TO-3P Packaging Tube June 2007 Rev 1 1/9 www.st.com 9 This is preliminary information on a new product now in development or undergoing evaluation.
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