2STA2120 transistor equivalent, high power pnp epitaxial planar bipolar transistor.
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High breakdown voltage VCEO = 250 V Complementary to 2STC5948 Fast-switching speed Typical ft = 25 MHz Fully characterized at 125 oC
3 2 1
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Audio power amplifier
TO-3P
Description
Figure 1. The device is a PNP transistor manufactured using new BiT-LA .
Figure 1. The device is a PNP transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Internal schematic diagram
Table 1.
Device summary
Marking 2S.
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