• Part: 2STA2510
  • Description: High power PNP epitaxial planar bipolar transistor
  • Category: Transistor
  • Manufacturer: STMicroelectronics
  • Size: 127.86 KB
Download 2STA2510 Datasheet PDF
STMicroelectronics
2STA2510
Features - - - - - High breakdown voltage VCEO = -100 V plementary to 2STC2510 Fast-switching speed Typical ft = 20 MHz Fully characterized at 125 o C 3 2 1 Applications - Audio power amplifier TO-3P Description The device is a PNP transistor manufactured using new Bi T-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Figure 1. Internal schematic diagram Table 1. Device summary Marking 2STA2510 Package TO-3P Packaging Tube Order code 2STA2510 May 2008 . Rev 2 1/7 .st. A7 Electrical ratings .. Electrical ratings Absolute maximum rating Parameter Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current (t P < 5ms) Total dissipation at Tc = 25 °C Storage temperature Max. operating junction temperature Value -100 -100 -6 -25 -50 125 -65 to 150 150 Unit V V V A A W °C °C Table 2. Symbol VCBO VCEO VEBO IC ICM PTOT Tstg...