2N2369A - Silicon Planar Epitaxial NPN transistor

Description

The 2N2369A is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case.

It is designed specifically for high-speed saturated switching applications at current levels from 100 µA to 100 mA.

STMicroelectronics

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Datasheet Details

Part number	2N2369A
Manufacturer	STMicroelectronics
File Size	95.35 KB
Description	Silicon Planar Epitaxial NPN transistor
Datasheet	2N2369A Datasheet
Additional preview pages of the 2N2369A datasheet.

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Full PDF Text Transcription

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2N2369A HIGH-SPEED SATURATED SWITCH DESCRIPTION The 2N2369A is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case. It is designed specifically for high-speed saturated switching applications at current levels from 100 µA to 100 mA. TO-18 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CB O V CE S V CE O V EB O IC I CM Pt ot Parameter Collector-base Voltage (I E = 0) Collector-emitter Voltage (V BE = 0) Collector-emitter Voltage (I B = 0) Emitter-base Voltage (I C = 0) Collector Current Collector Current (10 µs pulse) Total Power Dissipation at T amb ≤ 25 °C at T c ase ≤ 25 °C at T c ase ≤ 100 °C Storage and Junction Temperature Value 40 40 15 4.5 0.2 0.5 0.36 1.2 0.

Published: May 28, 2005 |