23NM60ND datasheet, mosfet equivalent, STMicroelectronics

Features and benefits

Order code VDS @ TJ max RDS(on) max. ID t(s) 3 c 2 1 du TO-247 lete Pro D(2, TAB) STW23NM60ND 650 V
* Fast-recovery body diode
* Low gate charge and input.

Application

* Switching applications 0.180 Ω 19.5 A bso G(1) t(s) - O S(3) AM01475v1_noZen Description This FDmesh II Power.

Description

This FDmesh II Power MOSFET with fast-recovery body diode is produced using MDmesh II technology. Utilizing a new strip-layout vertical structure, this device features low on-resistance and superior switching performance. It is ideal for bridge topol.

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