23NM50N mosfet equivalent, n-channel power mosfet.
Order codes
STB23NM50N STF23NM50N STP23NM50N STW23NM50N
VDSS (@Tjmax)
550 V
RDS(on) max.
< 0.19 Ω
ID 17 A
* 100% avalanche tested
* Low input capacitance and.
Description
These devices are made using the second generation of MDmesh™ technology. This revolutionary Power MOSFET a.
These devices are made using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is theref.
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