23NM60N Datasheet, STMicroelectronics

Type STB23NM60N STI23NM60N STF23NM60N STP23NM60N STW23NM60N 1. Limited only by maximum temperature allowed
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* VDSS (@Tjmax) RDS(on) max ID 1 3 3 12 1.

Description This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Po.

This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. .