18NM80
Overview
These N-channel Power MOSFETs are developed using STMicroelectronics’ revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics.
- Limited only by maximum temperature allowed 3 * *
- 100% avalanche tested Low input capacitance and gate charge Low gate input resistance 1 2 2 1 3 TO-220 TO-247
