Datasheet4U Logo Datasheet4U.com

18NM60 - N-CHANNEL POWER MOSFET

Description

The UTC 18NM60 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages.

This device is suitable for use as a load switch or in PWM applications.

Features

  • RDS(ON) < 0.3Ω @ VGS=10V, ID=9.0A.
  • Fast Switching Capability.
  • Avalanche Energy Specified.
  • Improved dv/dt Capability, High Ruggedness 1 TO-220 1 TO-220F 1 TO-220F1 1 TO-220F2 1 TO-252 1 TO-263.
  • SYMBOL 2.Drain 1.Gate 3.Source.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
18NM60N N-channel Power MOSFET STMicroelectronics
18NM65 N-CHANNEL POWER MOSFET Unisonic Technologies
18NM50-U2 N-CHANNEL POWER MOSFET Unisonic Technologies
18NM70 N-CHANNEL POWER MOSFET Unisonic Technologies
18NM80 STF18NM80 STMicroelectronics

Other Datasheets by Unisonic Technologies

Part Number Description
18NM80-Q 800V N-CHANNEL MOSFET
18N20 N-CHANNEL POWER MOSFET
18N25-HC N-CHANNEL POWER MOSFET
18N50-C N-CHANNEL MOSFET
18N50-MH N-CHANNEL POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
UNISONIC TECHNOLOGIES CO., LTD 18NM60 Power MOSFET 18A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 18NM60 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES * RDS(ON) < 0.3Ω @ VGS=10V, ID=9.0A * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness 1 TO-220 1 TO-220F 1 TO-220F1 1 TO-220F2 1 TO-252 1 TO-263  SYMBOL 2.Drain 1.Gate 3.