Order codes VDSS (@Tjmax) RDS(on) max. ID PTOT STB18NM60N STF18NM60N STP18NM60N STW18NM60N 650 V 110 W 30 W < 0.285 Ω 13 A 110
* 100% avalanche tested
* L.

* Switching applications Figure 1. Internal schematic diagram Description These devices are N-channel Power MOSFET.

These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and .

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