STN8205A Datasheet | STANSON

DESCRIPTION STN8205A is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, such as notebook puter power management and other battery powered circuits, where high-side switching is required. PIN CONFIGURATION TSSOP-8 D2 S2 S2 G2 FEATURE l 20V/5.0A, RDS(ON) = 21m-ohm (Typ.) @VGS =4.5V l 20V/3.0A, RDS(ON) =27m-ohm @VGS =2.5V l Super high density cell design for extremely low RDS(ON) l Exceptional low on-resistance and maximum DC current capability l TSSOP-8 package design D1 S1 S1 G1 Y: Year Code A: Date Code B: Process Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://.stansontech. STN8205A 2007. V1 Dual N Channel Enhancement Mode MOSFET 5.0A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ unless otherwise noted ) Parameter Symbol Typical Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Operation Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient VDSS VGSS IDM IS PD TJ TSTG RθJA 20 +/-20 5.0 3.4 30 2 2.0 1.2 -40/140 -55/150 105 Unit V V A ℃ ℃ ℃/W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://.stansontech. STN8205A 2007. V1 Dual N Channel Enhancement Mode MOSFET 5.0A ELECTRICAL CHARACTERISTICS ( Ta = 25℃ unless otherwise noted ) Parameter Static...