SST29VE010 eeprom equivalent, 1 mbit (128k x8) page-mode eeprom.
* Single Voltage Read and Write Operations
– 5.0V-only for SST29EE010
– 3.0-3.6V for SST29LE010
– 2.7-3.6V for SST29V.
the SST29EE/LE/VE010 are offered with a guaranteed PageWrite endurance of 10,000 cycles. Data retention is rated at gre.
The SST29EE/LE/VE010 are 128K x8 CMOS Page-Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability c.
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