SST29EE010 datasheet, eeprom equivalent, SST

Features and benefits

* Single Voltage Read and Write Operations
  – 5.0V-only for SST29EE010
  – 3.0-3.6V for SST29LE010
  – 2.7-3.6V for SST29V.

Application

the SST29EE/LE/VE010 are offered with a guaranteed PageWrite endurance of 10,000 cycles. Data retention is rated at gre.

Description

The SST29EE/LE/VE010 are 128K x8 CMOS Page-Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability c.

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