SST29LE512 datasheet, eeprom equivalent, SST

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Features and benefits

* Single Voltage Read and Write Operations
  – 5.0V-only for SST29EE512
  – 3.0-3.6V for SST29LE512
  – 2.7-3.6V for SST29V.

Application

the SST29EE512/29LE512/ 29VE512 are offered with a guaranteed Page-Write endurance of 104 cycles. Data retention is rat.

Description

The SST29EE512/29LE512/29VE512 are 64K x8 CMOS, Page-Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufactu.

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