SST29EE512 eeprom equivalent, 512 kilobit (64k x8) page-mode eeprom.
* Single Voltage Read and Write Operations
– 5.0V-only for SST29EE512
– 3.0-3.6V for SST29LE512
– 2.7-3.6V for SST29V.
the SST29EE512/29LE512/ 29VE512 are offered with a guaranteed Page-Write endurance of 104 cycles. Data retention is rat.
The SST29EE512/29LE512/29VE512 are 64K x8 CMOS, Page-Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufactu.
Image gallery
TAGS
Download