█100V,70A,Rds(on)(typ)=9.2mΩ @Vgs=10V █ High Ruggedness █ Fast Switching █ 100% Avalanche Tested █ Improved dv/dt Capability General Description This Power MOSFET is prod.

This Power MOSFET is produced using Si-Tech’s advanced Trench MOS Technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.These devices are well suited for low volt.

S10H038R

S10H038S

S10H050R

S10H050S

S10H06R

S10H06RN

S10H06RP

S10H06S

S10H08R

S10H08RN

S10H08RP

S10H08S

S10H12R

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